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“First-principles study of initial growth of GaXO layer on GaAs-β2(2 × 4) surface and interface passivation by F” Weichao Wang, Ka Xiong, Robert M. Wallace, Kyeongjae Cho*. Journal of Applied Physics 110, 103714 (2011).
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Prof. WeiChao Wang

Principle Investigator

weichaowang@nankai.edu.cn