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“Si passivation effects on atomic bonding and electronic properties at HfO2/GaAs interface: A first-principles study” Weichao Wang, Ka Xiong, Cheng Gong, Robert M. Wallace, Kyeongjae Cho*. Journal of Applied Physics 109, 063704 (2011).
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Prof. WeiChao Wang

Principle Investigator

weichaowang@nankai.edu.cn