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“Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs: HfO2 Interfaces” Weichao Wang, Ka Xiong, Robert M. Wallace, and Kyeongjae Cho*. J. Phys. Chem. C, 114 (51), 22610–22618 (2010).

Prof. WeiChao Wang

Principle Investigator

weichaowang@nankai.edu.cn