2012 and earlierYour Address：HOME > publication > 2012 and earlier > 正文
[2]
更新时间：2019-01-03 15:31:46 点击次数：245次
“First-Principles study of HfO2/:GaAs interface passivation by Si and Ge”
Weichao Wang, Ka Xiong, Geunsik Lee, Min Huang, Robery M. Wallace and Kyeongjae Cho* (2009).